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AS6C1608 Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation |
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AS6C1608 Datasheet(HTML) 2 Page - Alliance Semiconductor Corporation |
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2 / 13 page ![]() AS6C1608 Rev. 1.1 2048K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 1 FEATURES Fast access time : 55/70ns Low power consumption: Operating current : 45/30mA (TYP.) Standby current : 4 A (TYP.) SL-version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 1.2V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II 48-ball 8mm x 10mm TFBGA GENERAL DESCRIPTION The AS6C1608 is a 16,777,216-bit low power CMOS static random access memory organized as 2,097,152 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C1608 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C1608 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C1608(I) -40 ~ 85℃ 2.7 ~ 3.6V 55/70ns 4µA(SL) 45/30mA FUNCTIONAL BLOCK DIAGRAM DECODER I/O DATA CIRCUIT CONTROL CIRCUIT 2048Kx8 MEMORY ARRAY COLUMN I/O A0-A20 Vcc Vss DQ0-DQ7 CE# WE# OE# CE2 PIN DESCRIPTION SYMBOL DESCRIPTION A0 – A20 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE#, CE2 Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection PIN CONFIGURATION |
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