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AS6C4016 Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation |
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AS6C4016 Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation |
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1 / 12 page  FEATURES Fast access time : 55ns Low power consumption: Operating current: 30mA (TYP.) Standby current : 4 A (TYP.) LL-version Single 2.7V~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage :1.5V(MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The operates froma single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby(ISB1,TYP.) Operating(Icc,TYP.) (I) -40 ~ 85 2.7 ~ 5.5V 55ns 4µA(LL) 30mA FUNCTIONAL BLOCK DIAGRAM TO O R T I O V OU OO U R L WW L AA C C R YY2 c/2 C C M7 2 c/2 T O R T R PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A17 Address Inputs DQ0 – DQ15 Data Inputs/Outputs CE# Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground 512KX 8 BIT LOW POWER CMOS SRAM January 2007 MARCH 2008 MARCH/2008, V 1.0 Alliance Memory Inc. Page 1 of 12 AS6C4016 256K X 16 BIT SUPER LOW POWER CMOS SRAM |
Similar Part No. - AS6C4016 |
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Similar Description - AS6C4016 |
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