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MDP1923TH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

Part # MDP1923TH
Description  Single N-channel Trench MOSFET 100V, 69A, 13.9m(ohm)
PDF  6 Pages
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDP1923TH Datasheet(HTML) 1 Page - MagnaChip Semiconductor.

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Jun. 2015. Rev 1.1
MagnaChip Semiconductor Ltd.
1
Absolute Maximum Ratings (Ta = 25
oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(1)
TC=25
oC
ID
69
A
TC=100
oC
44
Pulsed Drain Current
IDM
276
Power Dissipation
TC=25
oC
PD
139
W
TC=100
oC
56
Single Pulse Avalanche Energy
EAS
(2)
72
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
(1)
RθJA
62.5
oC/W
Thermal Resistance, Junction-to-Case
RθJC
0.9
MDP1923
Single N-channel Trench MOSFET 100V, 69A, 13.9m
Ω
Features
VDS = 100V
ID = 69A @VGS = 10V
RDS(ON)
< 13.9
mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
General Description
The MDP1923 uses advanced MagnaChip
’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1923 is suitable device for Synchronous
Rectification for Server / Adapter and general purpose
applications.
D
G
S
TO-220


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