MMP60R195PC datasheet(3/10 Pages) MGCHIP

3 / 10 page

MMP60R195PC Datasheet

Nov. 2014 Revision 1.0

MagnaChip Semiconductor Ltd.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain

– Source

Breakdown voltage

V(BR)DSS

600

VGS = 0V,

ID=0.25mA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID=0.25mA

Zero Gate Voltage

Drain Current

IDSS

μA

VDS = 600V,

VGS = 0V

Gate Leakage Current

IGSS

100

VGS = ±30V,

VDS =0V

Drain-Source On

State Resistance

RDS(ON)

0.17

0.195

Ω

VGS = 10V, ID = 7.3 A

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Input Capacitance

Ciss

1569

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

999

Reverse Transfer Capacitance

Crss

Effective Output Capacitance

Energy Related

(3)

Co(er)

VDS = 0V to 480V,

VGS = 0V,f = 1.0MHz

Turn On Delay Time

td(on)

VGS = 10V, RG = 25Ω,

VDS = 300V, ID = 20 A

Rise Time

Turn Off Delay Time

td(off)

150

Fall Time

Total Gate Charge

VGS = 10V, VDS = 480V,

ID = 20 A

Gate

– Source Charge

Qgs

Gate

– Drain Charge

Qgd

Gate Resistance

2.2

Ω

VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

 Static Characteristics (T

c=25℃ unless otherwise specified)

 Dynamic Characteristics (T

c=25℃ unless otherwise specified)

MMP60R195PC Datasheet(PDF) 3 Page - MagnaChip Semiconductor.

MMP60R195PC Datasheet(HTML) 3 Page - MagnaChip Semiconductor.

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL