RN1907~RN1909

2001-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1907,RN1908,RN1909

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in US6 (ultra super mini type with 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2907~RN2909

Equivalent Circuit and Bias Resistor Values

°°°°C) (Q1, Q2 Common)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

RN1907~1909

50

V

RN1907

6

RN1908

7

Emitter-base voltage

RN1909

15

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

RN1907~1909

−55~150

°C

*: Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-2J1A

Weight: 6.8mg

Type No.

R1 (kΩ)R2 (kΩ)

RN1907

10

47

RN1908

22

47

RN1909

47

22

Unit: mm