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ESDARF02-1BU2 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDARF02-1BU2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics ESDARF02-1BU2 2/9 DocID026231 Rev 2 1 Characteristics Note: For a surge greater than the maximum values, the diode will fail in short-circuit Figure 2. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage: IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge 8 20 kV PPP Peak pulse power (8/20 µs) 30 W IPP Peak pulse current (8/20 µs) 1 A Tj Operating junction temperature range - 40 to +150 °C Tstg Storage temperature range - 65 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Symbol Parameter V = Breakdown voltage I = Leakage current at V V = Stand-off voltage I = Peak pulse current Cline = Line capacitance R BR RM RM RM PP d = Dynamic impedance aT = Voltage temperature coefficient I = Breakdown current R Table 2. Electrical characteristics (values, Tamb = 25 °C) Symbol Test Condition Min. Typ. Max. Unit VBR IR = 1 mA 6 V IRM VRM = 3 V 170 nA VCL IPP = 1 A, 8/20 µA 30 V Cline F = (200 MHz- 3000 MHz), VR = 0 V 0.24 0.35 pF |
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