HSP061-2Y datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

HSP061-2Y

2/8

DocID024471 Rev 2

Characteristics

Table 1. Absolute maximum ratings Tamb = 25 °C

Symbol

Parameter

Value

Unit

VPP

(1)

Peak pulse voltage

ISO 10605 - C = 150 pF, R = 330

contact discharge

air discharge

ISO 10605 - C = 330 pF, R = 330

contact discharge

air discharge

Ipp

Peak pulse current (8/20 µs)

Operating junction temperature range

-40 to +150

°C

Tstg

Storage temperature range

-65 to +150

°C

Maximum lead solder temperature (10 s duration)

260

°C

1. For a surge greater than the maximum values, the diode will fail in short-circuit.

Table 2. Electrical characteristics Tamb = 25 °C

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR

Breakdown voltage

IR = 1 mA

Leakage current

VR = 5 V

150

VR = 3 V

100

VCL

Clamping voltage

ISO 10605 - C = 150 pF, R = 330

+8 kV contact discharge, measured

at 30 ns

CI/O - GND

Capacitance (input/output

to ground)

VI/O = 0 V, F = 200 to 3000 MHz,

VOSC = 30 mV

0.6

0.85

ΔCI/O - GND

Capacitance variation

(input/output to ground)

VI/O = 0 V F = 200 to 3000 MHz,

VOSC = 30 mV

0.03

0.08

Cut-off frequency

-3 dB

5.5

GHz

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