Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Mar. 2017. Rev. 2.0

1/6

SW039R06ET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-263

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

90*

A

Continuous drain current (@T

57*

A

I

DM

Drain current pulsed

(note 1)

360

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

1448

mJ

E

AR

Repetitive avalanche energy

(note 1)

68

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

231

219

W

1.85

1.75

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-263

R

thjc

Thermal resistance, Junction to case

0.54

0.57

R

thja

Thermal resistance, Junction to ambient

54

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 039R06ET

SW039R06ET

TO-220

TUBE

2

SW B 039R06ET

SW039R06ET

TO-263

TUBE

N-channel Enhanced mode TO-220/TO-263 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 108nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Telecom, Computer, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 90A

R

1

2

3

TO-220

1

2

3

TO-263

1

2

3