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Nov. 2016. Rev. 2.0

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SW045R08ET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

80

V

I

D

Continuous drain current (@T

100*

A

Continuous drain current (@T

63*

A

I

DM

Drain current pulsed

(note 1)

400

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

1511

mJ

E

AR

Repetitive avalanche energy

(note 1)

57

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

208

W

1.7

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

0.6

R

thja

Thermal resistance, Junction to ambient

57

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW B 045R08ET

SW045R08ET

TO-263

TUBE

N-channel Enhanced mode TO-263 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 139nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 100A

R

1

2

3

TO-263

1

2

3