Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200V

Forward Current - 3.0A

FEATURES

• Metal silicon junction, majority carrier conduction

• For surface mounted applications

• Low power loss, high efficiency

• High forward surge current capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Absolute Maximum Ratings and Electrical characteristics

Ratings at

ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,

for capacitive load, derate by 20 %

25

°C

MECHANICAL DATA

pprox. Weight: 57

• Case: SMBF

• Terminals: Solderable per MIL-STD-750, Method 2026

• A

mg / 0.002oz

Page 1 of 3

SS32BF THRU SS320BF

PINNING

PIN

1

2

DESCRIPTION

Cathode

Anode

Simplified outline SMBF and symbol

1

2

Maximum DC Blocking Voltage

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

Maximum Average Forward Rectified Current

20

40

V

14

28

V

V

3.0

0.5

5

-55 ~ +150

A

A

V

mA

°C

Units

20

40

Peak Forward Surge Current,8.3ms

Single Half Sine-wave Superimposed

on Rated Load (JEDEC method)

Max Instantaneous Forward Voltage at 3 A

Maximum DC Reverse Current

at Rated DC Reverse Voltage

Operating Junction Temperature Range

SS32BF

SS34BF

SS36BF

SS38BF

SS310BF SS312BF SS315BF SS320BF

T = 25

°C

a

T =100

°C

a

Symbols

Storage Temperature Range

60

42

60

80

56

80

100

100

0.55

0.70

0.85

-55 ~ +150

°C

120

120

150

105

150

200

140

200

0.95

0.3

3

70

80

70

84

65

Typical Thermal Resistance

°C/W

Typical Junction Capacitance

pF

450

400

（1）

（2）

Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）

（1）

P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

2016 Rev 1.0