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SW6N70A

Oct. 2015. Rev. 2.0

1/6

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to source voltage

700

V

6*

A

3.8*

A

Drain current pulsed

(note 1)

24

A

Gate to source voltage

±30

V

Single pulsed avalanche energy

(note 2)

188

mJ

Repetitive avalanche energy

(note 1)

25

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

222

W

1.78

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

0.56

Thermal resistance, Junction to ambient

77.3

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

TO-251

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 6N70A

SW6N70A

TO-251

TUBE

1

2

3

N-channel Enhanced mode TO-251 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 24nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Industrial Power, Charge, Adaptor

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 6A

R

DS(ON)

: 1.7Ω

1

2

3