Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Oct. 2016. Rev. 3.0

1/7

N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F

TO-220

TO-252

V

DSS

Drain to source voltage

500

V

I

D

Continuous drain current (@T

9*

A

Continuous drain current (@T

5.7*

A

I

DM

Drain current pulsed

(note 1)

36

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

462

mJ

E

AR

Repetitive avalanche energy

(note 1)

64

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

23.3

200

181

W

0.19

1.6

1.4

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-220

TO-252

R

thjc

Thermal resistance, Junction to case

5.36

0.63

0.69

R

thja

Thermal resistance, Junction to ambient

53

60

*. Drain current is limited by junction temperature.

BV

I

D

: 9A

R

1. Gate 2. Drain 3. Source

TO-220F

TO-220

SW9N50D

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 9N50D

SW9N50D

TO-220F

TUBE

2

SW P 9N50D

SW9N50D

TO-220

TUBE

3

SW D 9N50D

SW9N50D

TO-252

REEL

1

2

3

1

2 3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 31nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-DC，LED，PC

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

TO-252

1

2

3