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Oct. 2015. Rev. 2.0

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SW9N90B

N-channel Enhanced mode TO-220 MOSFET

Absolute maximum ratings·

Symbol

Parameter

Value

Unit

Drain to source voltage

900

V

9*

A

5.7*

A

Drain current pulsed

(note 1)

36

A

Gate to source voltage

±30

V

Single pulsed avalanche energy

(note 2)

680

mJ

Repetitive avalanche energy

(note 1)

100

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

245

W

1.96

Operating junction temperature & storage temperature

-55 ~ + 150

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

0.51

Thermal resistance, Junction to ambient

58

*. Drain current is limited by junction temperature.

BV

I

D

: 9A

R

DS(ON)

: 1.34Ω

1. Gate 2. Drain 3. Source

TO-220

1

2

3

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 9N90B

SW9N90B

TO-220

TUBE

1

2

3

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 36nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:UPS, SMPS

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.