VND5E025ASTR-E datasheet(9/37 Pages) STMICROELECTRONICS

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VND5E025AS-E

Electrical specifications

Doc ID 022490 Rev 6

9/37

RON

On-state resistance (1)

IOUT = 3 A; Tj =25°C

IOUT = 3 A; Tj =150°C

IOUT = 3 A; VCC =5 V; Tj =25°C

Vclamp

Clamp voltage

IS = 20 mA

Supply current

Off-state; VCC =13V; Tj =25°C;

VIN =VOUT =VSENSE =VCSD =0V

2(2)

5(2)

µA

On-state; VCC =13V; VIN =5 V;

IOUT =0 A

IL(off1)

Off-state output

current (1)

VIN =VOUT =0 V; VCC =13 V;

Tj = 25°C

00.01

µA

VIN =VOUT =0 V; VCC =13 V;

Tj = 125°C

Output - VCC diode

voltage (1)

-IOUT = 4 A; Tj = 150°C

0.7

For each channel.

PowerMOS leakage included.

Table 6.

Switching (VCC =13 V; Tj = 25°C)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

RL =4.3 Ω

(see Figure 6)

—20

—

µs

td(off)

Turn-off delay time

—

(dVOUT/dt)on Turn-on voltage slope

RL =4.3 Ω

—See Figure 27

—

V/µs

(dVOUT/dt)off Turn-off voltage slope

—

See Figure 28

—

WON

Switching energy losses

during tWON

RL =4.3 Ω

(see Figure 6)

—0.6

—

WOFF

Switching energy losses

during tWOFF

—0.35

—

Table 7.

Logic inputs

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIL

Input low level voltage

0.9

IIL

Low level input current

VIN =0.9 V

µA

VIH

Input high level voltage

2.1

IIH

High level input current

VIN =2.1 V

µA

Table 5.

Power section (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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