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2N4449 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N4449
Description  NPN SILICON SWITCHING TRANSISTOR
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N4449 Datasheet(HTML) 2 Page - Microsemi Corporation

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2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
15
Vdc
Collector-Emitter Cutoff Current
VCE = 20 Vdc
ICES
0.4
µAdc
Emitter-Base Breakdown Voltage
VEB = 4.5 Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
10
0.25
µAdc
Collector-Base Breakdown Voltage
VCB = 40 Vdc
Collector-Base Cutoff Current
VCB = 32 Vdc
ICBO
10
0.2
µAdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 0.35 Vdc
IC = 30 mAdc, VCE = 0.4 Vdc
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 100 mAdc, VCE = 1.0 Vdc
hFE
40
30
40
20
120
120
120
120
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
VCE(sat)
0.20
0.25
0.45
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
VBE(sat)
0.70
0.80
0.85
0.90
1.20
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz
h
fe
5.0
10
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
4.0
pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
5.0
pF
(1)Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc
ton
12
ηs
Turn-Off Time
IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc
toff
18
ηs
Charge Storage Time
IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc
ts
13
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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