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AF4835P Datasheet(PDF) 2 Page - Anachip Corp

Part # AF4835P
Description  P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  ANACHIP [Anachip Corp]
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Logo ANACHIP - Anachip Corp

AF4835P Datasheet(HTML) 2 Page - Anachip Corp

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AF4835P
P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.2 Nov 19, 2004
2/6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
TA=25ºC
-8
ID
Continuous Drain Current (Note 1)
TA=70ºC
-6
A
IDM
Pulsed Drain Current (Note 2)
-50
A
Total Power Dissipation
2.5
W
PD
Linear Derating Factor
TA=25ºC
0.02
W/ºC
TSTG
Storage Temperature Range
-55 to 150
ºC
TJ
Operating Junction Temperature Range
-55 to 150
ºC
Thermal Data
Symbol
Parameter
Maximum
Units
Rthj-amb
Thermal Resistance Junction-ambient (Note 1)
Max.
50
ºC/W
Electrical Characteristics at T
J=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
-30
-
-
V
∆BVDSS / ∆TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25
oC,
ID=-1mA
-
-0.037
-
V/
oC
VGS=-10V, ID=-8A
-
-
20
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=-4.5V, ID=-5A
-
-
35
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-15V, ID=-8A
-
20
-
S
Drain-Source Leakage Current
(TJ=25
oC)
VDS=-30V, VGS=0V
-
-
-1
IDSS
Drain-Source Leakage Current
(TJ=70
oC)
VDS=-24V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge (Note 3)
-
36
-
Qgs
Gate-Source Charge
-
5.5
-
Qgd
Gate-Drain (“Miller”) Charge
ID=-4.6A,
VDS=-15V,
VGS=-10V
-
3.5
-
nC
td(on)
Turn-On Delay Time (Note 3)
-
12
-
tr
Rise Time
-
8
-
td(off)
Turn-Off Delay Time
-
75
-
tf
Fall-Time
VDS=-15V,
ID=-1A,
RG=6Ω, VGS=-10V
RD=15Ω
-
40
-
ns
Ciss
Input Capacitance
-
1530
-
Coss
Output Capacitance
-
900
-
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
f=1.0MHz
-
280
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
(Body Diode)
VD=VG=0V, VS=-1.2V
-
-
-2.08
A
VSD
Forward On Voltage (Note 3)
TJ=25
oC, I
S=-2.1A,
VGS=0V
-
-0.75
-1.2
V
Note 1: Surface mounted on 1 in
2 copper pad of FR4 board; 125oC/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.



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