74LVC1G32

Document number: DS32200 Rev. 8 - 2

4 of 14

www.diodes.com

July 2014

© Diodes Incorporated

74LVC1G32

Symbol

Parameter

Test Conditions

-40°C to +85°C

-40°C to +125°C

Unit

Min

Typ

Max

Min

Max

High-Level

Output Voltage

1.65V to 5.5V

—

—

—

V

1.65V

1.2

—

—

0.95

—

2.3V

1.9

—

—

1.7

—

2.7V

2.2

—

—

1.9

—

3V

2.4

—

—

2.2

—

2.3

—

—

2.0

—

4.5V

3.8

—

—

3.4

—

Low-Level

Output Voltage

1.65V to 5.5V

—

—

0.1

—

0.1

V

1.65V

—

—

0.45

—

0.7

2.3V

—

—

0.3

—

0.45

2.7V

—

—

0.4

—

0.6

3V

—

—

0.4

—

0.6

—

—

0.55

—

0.8

4.5V

—

—

0.55

—

.8

Input Current

0 to 5.5V

—

± 0.1

±5

—

± 100

μA

Power Down

Leakage

Current

0V

—

—

±10

—

±200

μA

Supply Current

5.5V

—

0.1

10

—

200

μA

Additional

Supply Current

GND

3V to 5.5V

—

—

500

—

5000

μA

Input

Capacitance

3.3V

—

5

—

—

—

pF

Symbol

Parameter

Test Conditions

Min

Typ.

Max

Unit

Thermal Resistance

Junction-to-Ambient

SOT25

(Note 9)

—

204

—

°C/W

SOT353

—

371

—

SOT553

—

231

—

X2-DFN0808-4

—

400

—

X1-DFN1010-6

—

435

—

X2-DFN1010-6

—

445

—

X2-DFN1409-6

—

470

—

X2-DFN1410-6

—

460

—

Thermal Resistance

Junction-to-Case

SOT25

(Note 9)

—

52

—

°C/W

SOT353

—

143

—

SOT553

—

105

—

X2-DFN0808-4

—

225

—

X1-DFN1010-6

—

250

—

X2-DFN1010-6

—

250

—

X2-DFN1409-6

—

275

—

X2-DFN1410-6

—

265

—

Note:

9. Test condition for each of the 8 package types: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.