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LF442AMH/NOPB Datasheet(PDF) 1 Page - Texas Instruments

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Part # LF442AMH/NOPB
Description  Dual Low Power JFET Input Operational Amplifier
PDF  25 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LF442AMH/NOPB Datasheet(HTML) 1 Page - Texas Instruments

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LF442-MIL
Ri
Rf
VCC
-VEE
Copyright © 2017, Texas Instruments Incorporated
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM442-MIL
SNOSD59 – JUNE 2017
LF442-MIL Dual Low Power JFET Input Operational Amplifier
1
1 Features
1
•
1/10 Supply Current of a LM1458: 400 μA (Max)
•
Low Input Bias Current: 50 pA (Max)
•
Low Input Offset Voltage: 1 mV (Max)
•
Low Input Offset Voltage Drift: 7 μV/°C (Typ)
•
High Gain Bandwidth: 1 MHz
•
High Slew Rate: 1 V/μs
•
Low Noise Voltage for Low Power: 35 nV/
√Hz
•
Low Input Noise Current: 0.01 pA/
√Hz
•
High Input Impedance: 1012Ω
•
High Gain VO = ±10V, RL = 10k: 50k (Min)
2 Applications
•
High Speed Integrators
•
Fast D/A Converters
•
Sample and Hold Circuits
3 Description
The LF442-MIL dual low power operational amplifiers
provide many of the same AC characteristics as the
industry standard LM1458 while greatly improving the
DC characteristics of the LM1458. The amplifiers
have the same bandwidth, slew rate, and gain (10 kΩ
load) as the LM1458 and only draw one tenth the
supply current of the LM1458. In addition the well
matched high voltage JFET input devices of the
LF442-MIL reduce the input bias and offset currents
by a factor of 10,000 over the LM1458. A combination
of careful layout design and internal trimming ensures
very low input offset voltage and voltage drift. The
LF442-MIL also has a very low equivalent input noise
voltage for a low power amplifier.
The LF442-MIL is pin compatible with the LM1458
allowing an immediate 10 times reduction in power
drain in many applications. The LF442-MIL should be
used where low power dissipation and good electrical
characteristics are the major considerations.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LF442-MILACN
PDIP (8)
9.59 mm × 6.35 mm
LF442-MILAMH
TO-99 (8)
8.96 mm Diameter
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Inverting Amplifier


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