FMT2301S datasheet(2/4 Pages) FCI

2 / 4 page

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID=-250uA

Breakdown Voltage Temperature Coefficient

BVDSS/ Tj

-0.1

V/ :

Reference to 25 : , ID=-1mA

Gate Threshold Voltage

VGS(th)

-0.5

VDS= VGS, ID=-250uA

Forward Transconductance

gfs

4.4

VDS=-5.0V, ID=-2.8A

Gate-Source Leakage Current

IGSS

D100

VGS= D12V

Drain-Source Leakage Current(Tj=25 : )

-1

VDS=-20V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

-10

VDS=-16V, VGS=0

130

ID=-2.8A, VGS=-5.0V

Static Drain-Source On-Resistance2

RDS(ON)

190

m Ł

ID=-2.0A, VGS=-2.8V

Total Gate Charge2

5.2

ID=-2.8A

Gate-Source Charge

Qgs

1.36

VDS=-6.0V

Gate-Drain (“Miller”) Change

Qgd

0.6

VGS=-5.0V

Turn-on Delay Time2

Td(on)

5.2

Rise Time

9.7

Turn-off Delay Time

Td(off)

Fall Time

VDS=-15V

ID=-1A

VGS=-10V

RG=6 Ł

RD=15 Ł

Input Capacitance

Ciss

295

Output Capacitance

Coss

170

Reverse Transfer Capacitance

Crss

VGS=0V

VDS=-6V

f=1.0MHz

Source-Drain Diode

Forward On Voltage2

VSD

-1.2

IS=-1.6A, VGS=0 Tj=25 :

Continuous Source Current(Body Diode)

-1

VD= VG=0V, VS=-1.2V

Pulsed Source Current (Body Diode) 1

ISM

-10

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board;270 :/w when mounted on min. copper pad.

Characteristics Curve

PARAMETER

SYMBOL

MIN.

TYPE

MAX.

UNIT

TEST CONDITIONS

FMT2301S 2.6Amps 20 Voltage P - Channel POWER MOSFET

ELECTRICAL CHARACTERISTICS(Tj=25C UNLESS OTHERWISE SPECIFIED)

FMT2301S Datasheet(PDF) 2 Page - First Components International

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