STBV32 datasheet(2/6 Pages) FOSHAN

2 / 6 page

STBV32

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCES

700

Collector to Emitter Voltage

VCEO

400

Emitter to Base Voltage

VEBO

9.0

Collector Current - Continuous

1.5

Peak Collector Current - Continuous

ICM

3.0

Base Current - Continuous

0.5

Peak Base Current - Continuous

IBM

1.5

Collector Power Dissipation

1.0

Junction Temperature

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCES

IC=1mA

VBE=0

700

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

400

Emitter to Base Breakdown

Voltage

VEBO

IE=1mA

IC=0

Collector Cut-Off Current

ICEV

VCE=700V

VBE=-1.5V

0.1

Collector cut-off current

ICEO

VCE=400V

IB=0

0.1

Emitter Base Cut-Off Current

IEBO

VEB=9.0V

IC=0

0.1

DC Current Gain

hFE(1)

VCE=2.0V

IC=0.5A

hFE(2)

VCE=2.0V

IC=1.0A

Collector to Emitter Saturation

Voltage

*VCE(sat)1 IC=500mA

IB=100mA

0.5

*VCE(sat)2 IC=1.0A

IB=250mA

1.0

*VCE(sat)3 IC=1.5A

IB=500mA

1.5

Base to Emitter Saturation Voltage *VBE(sat)1 IC=500mA

IB=100mA

1.0

Base to Emitter Saturation Voltage *VBE(sat)2 IC=1.0A

IB=250mA

1.2

Fall time

VCE=5V

IC=0.25A

(UI9600)

0.6

μs

Storage time

3.0

μs

Transition Frequency

VCE=10V

IC=0.1A

f=1MHz

MHz

*脉冲测试：脉冲周期=300μS，占空比=1.5% *Pulsed:Pulsed duration=300μs,duty cycle≤1.5%.

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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