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2SB1068 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SB1068 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 3 page ![]() TO – 92 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1068 TRANSISTOR (PNP) FEATURES Low Collector Saturation Voltage High DC Current Gain High Collector Power Dissipation Complementary To The 2SD1513 NPN Transistor MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=- 0.1mA,IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -16 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -6 V Collector cut-off current ICBO VCB=-16V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA hFE(1) VCE=-2V, IC=-0.1A 135 650 DC current gain hFE(2) VCE=-2V, IC=-1.5A 100 VCE(sat)1 IC=-1A,IB=-10mA -0.4 V VCE(sat)2 IC=-1.5A,IB=-20mA -0.5 V Collector-emitter saturation voltage VCE(sat)3 IC=-1.5A,IB=-75mA -0.5 V Base-emitter saturation voltage VBE (sat) IC=-1.5A,IB=-75mA -1.2 V Base-emitter voltage VBE VCE=-6V, IC=-5mA -0.55 -0.65 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 60 pF Transition frequency fT VCE=-10V,IC=-50mA 100 MHz CLASSIFICATION OF hFE(1) RANK L K U RANGE 135-270 200-400 300-650 Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -16 V VEBO Emitter-Base Voltage -6 V IC Collector Current -2 A PC Collector Power Dissipation 625 mW RθJA Thermal Resistance From Junction To Ambient 200 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Dec,2015 |
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