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ASW214 Datasheet(PDF) 12 Page - Advanced Semiconductor Business Inc. |
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ASW214 Datasheet(HTML) 12 Page - Advanced Semiconductor Business Inc. |
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12 / 13 page ![]() 12/13 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 April 2017 ASW214 5 ~ 8000 MHz MMIC Amplifier RF IN RF OUT ASW214 Vsupply=+3.3 V C1=100 pF C2=100 pF L1=33 nH C4=1 F C3=100 pF R1=360 RF IN RF OUT ASW214 Vsupply=+3.3 V C1=100 pF C2=100 pF L1=33 nH C4=1 F C3=100 pF R1=360 1) OIP3 is measured with two tones at an output power of -3 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor APPLICATION CIRCUIT Wide Band 500 ~ 2700 MHz +3.3 V/ 35 mA Frequency (MHz) 900 2000 Magnitude S21 (dB) 18.0 16.3 Magnitude S11 (dB) -11 -13 Magnitude S22 (dB) -12 -10 Output P1dB (dBm) 12.3 12.5 Output IP31) (dBm) 24 24.5 Noise Figure (dB) 5.4 5.6 Device Voltage (V) +3.3 +3.3 Current (mA) 35 35 0 300 600 900 1200 1500 1800 2100 2400 2700 0 5 10 15 20 25 Frequency (MHz) 0 300 600 900 1200 1500 1800 2100 2400 2700 -20 -15 -10 -5 0 Frequency (MHz) 0 300 600 900 1200 1500 1800 2100 2400 2700 -20 -15 -10 -5 0 Frequency (MHz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency [MHz] |
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