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S8240B Datasheet(PDF) 21 Page - Seiko Instruments Inc |
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S8240B Datasheet(HTML) 21 Page - Seiko Instruments Inc |
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21 / 37 page ![]() BATTERY PROTECTION IC FOR 1-CELL PACK Rev.1.0_00 S-8240B Series 21 Battery Protection IC Connection Example R1 Battery C1 VSS DO VDD CO VM S-8240B Series FET1 FET2 EB − EB + R2 Figure 15 Table 11 Constants for External Components Symbol Part Purpose Min. Typ. Max. Remark FET1 N-channel MOS FET Discharge control − − − Threshold voltage ≤ Overdischarge detection voltage *1 FET2 N-channel MOS FET Charge control − − − Threshold voltage ≤ Overdischarge detection voltage *1 R1 Resistor ESD protection, For power fluctuation 270 Ω 330 Ω 1 k Ω − C1 Capacitor For power fluctuation 0.068 μF 0.1 μF 1.0 μF Caution should be exercised when setting VDIOV ≤ 20 mV, VCIOV ≥ −20 mV. *2 R2 Resistor ESD protection, Protection for reverse connection of a charger 300 Ω 470 Ω 4 k Ω Caution should be exercised when an FET with a large gate capacitance is used. *3 *1. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is detected. *2. When setting VDIOV ≤ 20 mV, VCIOV ≥ −20 mV for power fluctuation protection, the condition of R1 × C1 ≥ 47 μF • Ω should be met. *3. If an FET with a gate capacitance equal to or more than 5 nF is used, charge overcurrent detection voltage may become lower when R2 resistance is large. R2 resistance should be set to a smaller value when an FET with a gate capacitance equal to or more than 5 nF is used. Caution 1. The above constants may be changed without notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constant do not guarantee proper operation. Perform thorough evaluation using the actual application to set the constant. |
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