SDT6N06-C datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SDT6 06-C

6A, 60V, RDS(O ) 44 mΩ

Ω

-Channel Enhancement Mode Power MOSFET

21-Jun-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

J=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Gate-Threshold Voltage

VGS(th)

2.5

VDS=VGS, ID=250µA

Forward Transfer conductance

gfs

VDS=5V, ID=6A

Gate-Source Leakage Current

IGSS

±100

VDS=0,VGS= ±20V

VDS=48V, VGS=0,TJ=25°C

Drain-Source Leakage Current

IDSS

µA

VDS=48V, VGS=0, TJ=85°C

VGS=10V, ID=6A

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=4A

Total Gate Charge

Gate-Source Charge

Qgs

3.7

Gate-Drain Charge

Qgd

4.9

VDS=30V

VGS=10V

ID=6A

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDS=30V

VGS=10V

ID=1A

RG=6

Input Capacitance

Ciss

1160

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=30V

VGS=0

f=1MHz

Source-Drain Diode

Continuous Source Current

Pulsed Source Current

ISM

Forward On Voltage

VSD

1.2

IS=1A, VGS=0V

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

IF=5A , dI/dt=100A/µs ,

TJ=25°C

Notes:

Surface Mounted on 1” x 1” FR4 Board with 2OZ copper.

When mounted on minimum pad of 2 oz. copper.

Pulse width limited by maximum junction temperature.

Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%.

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