SSD50N03J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSD50N03J

50A, 30V, RDS(ON) 11m

N-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev.B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0, ID=250µA

Drain-Source Leakage Current

IDSS

µA

VDS=30V, VGS=0

Gate-Source Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

1.5

VDS=VGS, ID=250µA

VGS=10V, ID=25A

Static Drain-Source On-Resistance

RDS(ON)

VGS=5V, ID=20A

Forward Transfer conductance

gfs

VDS=5V, ID=20A

Dynamic Characteristics

Input Capacitance

Ciss

2000

Output Capacitance

Coss

280

Reverse Transfer Capacitance

Crss

160

VDS=15V

VGS=0

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Change

Qgd

4.5

VDS=10V

VGS=10V

ID=25A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=15V

VGS=10V

RG=1.8

ID=20A

Source-Drain Diode Characteristics

Diode Forward Voltage

VSD

1.2

IS=25A, VGS=0

Continuous Source Current

Pulsed Source Current

ISM

200

Notes:

Pulse Test : Pulse width

≤300µs, duty cycle ≤2%.

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