SSD55P30J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSD55P30J

-30A, -55V, RDS(ON) 40m

P-Ch Enhancement Mode Power MOSFET

13-Dec-2016 Rev.B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

-55

VGS=0, ID= -250µA

Zero Gate Voltage Drain Current

IDSS

-1

µA

VDS= -55V, VGS=0

Gate-Body Leakage Current

IGSS

±100

VDS=0V, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

-2

-4

VDS=VGS, ID= -250µA

Static Drain-Source On-Resistance

RDS(ON)

VGS= -10V, ID= -15A

Forward Transconductance

gfs

VDS= -25V, ID= -16A

Dynamic Characteristics

Input Capacitance

Ciss

3500

Output Capacitance

Coss

240

Reverse Transfer Capacitance

Crss

153

VDS= -30V

VGS=0

f=1MHz

Switching Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS= -30V

VGS= -10V

ID= -15A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD= -30V

VGS= -10V

RG=3

ID= -15A

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

-1.2

VGS=0, IS= -24A

Continuous Drain-Source Diode

Forward Current

-30

Pulsed Drain-Source Diode

Forward Current

ISM

-120

Notes:

Pulse test：Pulse width≦300µs, duty cycle≦2%.

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