SSP7454N datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSP7454N

26A, 60V, RDS(ON) 4.9mΩ

Ω

N-Channel Enhancement MOSFET

04-Jan-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Static

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Body Leakage

IGSS

±100

VDS=0, VGS= ±20V

VDS=48V, VGS=0

Zero Gate Voltage Drain Current

IDSS

µA

VDS=48V, VGS=0, TJ=55°C

On-State Drain Current

ID(ON)

VDS=5V, VGS=10V

4.9

VGS=10V, ID=10A

Drain-Source On-Resistance

RDS(ON)

5.5

VGS=4.5V, ID=8A

Forward Transconductance

gFS

VDS=15V, ID=10A

Diode Forward Voltage

VSD

0.73

IS=3.7A, VGS=0

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=30V

VGS=4.5V

ID=10A

Turn-On Delay Time

Td(ON)

Rise Time

Turn-Off Delay Time

Td(OFF)

166

Fall Time

VDS=30V

VGEN=10V

RL=3

RGEN=6

ID=10A

Input Capacitance

Ciss

7283

Output Capacitance

Coss

477

Reverse Transfer Capacitance

Crss

293

VDS=15V

VGS=0

f=1MHz

Notes:

Pulse test: Pulse width≦300µs, duty cycle≦2%.

SSP7454N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSP7454N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

Datasheet Download

Link URL