2SB1113 datasheet(1/2 Pages) ISC

Part #	2SB1113

Description	isc Silicon PNP Darlingtion Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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isc Silicon PNP Darlingtion Power Transistor

2SB1113

DESCRIPTION

·

High DC Current Gain-

: hFE= 1000(Min.)@IC= -4A

·

Low Collector Saturation Voltage-

: VCE(sat)= -2.0V(Max)@IC= -4A

·

Good Linearity of hFE

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

High power switching applications.

·

Hammer drive, pulse motor drive applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-12

A

PC

Collector Power Dissipation

@ Tc=25℃

40

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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