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BCP060T2 Datasheet(PDF) 1 Page - BeRex Corporation |
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BCP060T2 Datasheet(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm) The BeRex BCP060T2 is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 600 micron gate width making it ideally suited for applications requiring high-gain and medium power in the 1000 MHz to 26.5 GHz frequency range. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP060T2 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. DC CHARACTERISTICS Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS MIN. TYPICAL MAX. UNIT Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) 120 180 240 mA Gm Transconductance (Vds = 3V, Vgs = 50% Idss) 240 mS Vp Pinch-off Voltage (Ids = 0.6 mA, Vds = 2V) - 2.5 -1.1 - 0.5 V BVgd Drain Breakdown Voltage (Ig = 0.6 mA, source open) -16 -12 V BVgs Source Breakdown Voltage (Ig = 0.6 mA, drain open) -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 65 °C/W ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 27.5 27.5 29.0 29.0 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 11.0 8.0 12.0 9.0 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 65 60 % BCP060T2 PRODUCT FEATURES • 29 dBm Typical Output Power • 12 dB Typical Power Gain @ 12 GHz • 0.25 X 600 Micron Recessed Gate • 2 Gate Pads / 2 Drain Pads APPLICATIONS • Commercial • Military / Hi-Rel. • Test & Measurement www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 January 2015 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 |
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