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EC739435 Datasheet(PDF) 2 Page - E-CMOS Corporation

Part # EC739435
Description  -30V,-5.3A P-Channel MOSFET
PDF  8 Pages
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC739435 Datasheet(HTML) 2 Page - E-CMOS Corporation

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EC739435
-30V、
、
、
、-5.3A P-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 7
5D10N Rev.F003
Electrical Characteristics (TA=25℃
℃
℃
℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-1
µA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
-1
-3
V
VGS=-10V, ID=-5.3A
46
53
Drain-Source On-State Resistance RDS(ON)
VGS=-4.5V, ID=-4.2A
70
85
m
Forward Transconductance
gFS
VDS=-15V,ID=-4.5A
4
10
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
1040
PF
Output Capacitance
Coss
420
PF
Reverse Transfer Capacitance
Crss
VDS=-15V,VGS=0V,
F=1.0MHz
150
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
19
26
nS
Turn-on Rise Time
tr
9
13
nS
Turn-Off Delay Time
td(off)
74
105
nS
Turn-Off Fall Time
tf
VDD=-15V,ID=-1A
VGS=-10V,RGEN=6
36
50
nS
Total Gate Charge
Qg
12
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
VDS=-15V,ID=-5.3A,
VGS=-10V
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1.7A
-1.2
V
Diode Forward Current (Note 2)
IS
-1.9
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.



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