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MBRF2060CT-T Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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MBRF2060CT-T Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 3 page  1 ■ Maximum ratings and electrical characteristics O Rating at 25 C ambient temperature unless otherwise specified. Document ID : DS-11K025 Revised Date : 2016/08/31 Revision : C Main Product Characteristics I F ( AV ) 2 X 10A V R R M T J V F ( Ty p ) 60V O 150 C 0.615V ■ Circuit Diagram 20A Trench Schottky Rectifier MBRF2060CT-T Chip Integration Technology Corporation ■ Outline ITO-220AB Alternate symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max 0.383(9.72) 0.404(10.27) 0.248(6.3) 0.272(6.9) 0.571(14.5) 0.610(15.5) 0.516(13.1) 0.547(13.9) - 0.161(4.1) 0.094(2.4) 0.126(3.2) 0.039(1.0) 0.051(1.3) 0.020(0.5) 0.035(0.9) 0.095(2.41) 0.105(2.67) 0.169(4.3) 0.189(4.8) 0.055(1.4) 0.122(3.1) 0.091(2.3) 0.117(2.96) 0.014(0.35) 0.031(0.8) 0.122(3.1) 0.142(3.6) Marking code A J B C D E F G H I K L M N ØP 0.039(1.0) 0.051(1.3) symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max 0.390(9.9) 0.408(10.36) 0.268(6.8) 0.283(7.2) 0.583(14.8) 0.598(15.2) 0.512(13.0) 0.543(13.8) 0.102(2.6) 0.150(3.8) 0.101(2.55) 0.112(2.85) 0.043(1.1) 0.053(1.35) 0.043(1.1) 0.053(1.35) 0.020(0.5) 0.028(0.7) 0.098(2.49) 0.102(2.59) 0.169(4.3) 0.185(4.7) 0.112(2.85) 0.128(3.25) 0.098(2.5) 0.114(2.9) 0.020(0.5) 0.028(0.7) 0.130(3.3) 0.134(3.5) Marking code A J B C D E F G H I K L M N ØP Dimensions in inches and (millimeters) ■ Features ■ Mechanical data Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead free in compliance with EU RoHS. • • Epoxy : UL94-V0 rated flame retardant. . • Case : JEDEC ITO-220AB molded plastic body • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. ed. • Polarity: As mark . • Mounting Position : Any . • Weight : Approximated 2.25 gram Forward voltage drop (per diode) Reverse current (per diode) Parameter I O I F S M I R R M T S T G Forward rectified current (total device) Forward surge current (per leg) Typical Thermal resistance (per leg) Storage temperature Parameter 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Conditions Symbol MBRF2060CT-T UNIT -55 ~ +150 20 150 A A O C/W O C 8 R θ J C Junction to case Peak repetitive reverse surge current A 2us - 1kHz 2 Working peak reverse voltage V RW M 60 V V F I R O V = 60V T = 25 C R J O V = 60V T = 125 C R J Conditions Symbol TYP. UNIT 15 0.1 mV mA MIN. MAX. O I = 10A, T = 25 C F J O I = 10A, T = 125 C F J 720 (per leg) 615 Junction to ambient R θ J A 50 T J -55 ~ +150 O C Operating Junction temperature 0.005 630 3 V B R Reverse Breakdown Voltage (per diode) 60 O I = 0.1mA, T = 25 C R J V 470 O I = 3A, T = 25 C F J |
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