1

■ Features

O

C

Fast switching.

•

ESD improved capability.

•

•

•

100% single pulse avalanche energy test.

•

MHU07N65

Silicon N-Channel Power MOSFET

PARAMETER

Continuous Drain Current

Power Dissipation

Maximum temperature for soldering

Drain-to-Source Voltage

Document ID : DS-22M75

Revised Date : 2015/08/24

Revision : C

Gate-to-Source Voltage

CONDITIONS

Symbol

V

D S S

T

L

I

A R

MHU07N65

±30

450

UNIT

V

mJ

I

D

300

95

7

A

I

D M

E

A S

54

28

650

3.3

A

V

G S

E

A R

W

mJ

P

D

V

O

Derating factor above 25 C

Continuous Drain Current

O

T = 100 C

C

4.5

0.76

O

W/ C

Operating Junction and Storage Temperature Range

T , T

J

S T G

150,-55 ~ +150

Gate source ESD

V

E S D ( G - S )

3000

V

HBM-C = 100pF, R = 1.5kΩ

dV/dt

5.0

V/ns

NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.

O

2.L=10.0mH, I = 6.3A, Start T = 25 C.

D

J

O

3.I

=4A,di/dt ≤100A/µs, V ≤BV , Start T = 25 C.

S D

D D

D S

J

Main Product Characteristics

I

D

7A

V

D S S

o

P (T =25 C)

D

C

R

D S ( O N ) Ty p

650V

95W

1.1Ω

■ Application

Power switch circuit of adaptor and charger.

•

• Epoxy:UL94-V0 rated flame retardant

• Case : JEDEC TO-251 molded plastic body over

passivated chip

• Lead : Axial leads, solderable per MIL-STD-202,

Drain

Source

Gate

Inner Equivalent principium Chart

1.Gate 2.Drain 3.Source

1 2 3

Power Dissipation

Chip Integration Technology Corporation

■ Outline

TO-251