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P40F10SN Datasheet(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd

Part # P40F10SN
Description  Power MOSFET
PDF  4 Pages
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Manufacturer  SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
Direct Link  http://www.shindengen.co.jp/
Logo SHINDENGEN - Shindengen Electric Mfg.Co.Ltd

P40F10SN Datasheet(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd

  P40F10SN Datasheet HTML 1Page - Shindengen Electric Mfg.Co.Ltd P40F10SN Datasheet HTML 2Page - Shindengen Electric Mfg.Co.Ltd P40F10SN Datasheet HTML 3Page - Shindengen Electric Mfg.Co.Ltd P40F10SN Datasheet HTML 4Page - Shindengen Electric Mfg.Co.Ltd  
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０
１００
６０
８０
４０
２０
全損失減少率 −ケース温度
０
２５
５０
７５
１２５
１５０
１００
Case Temperature Tc〔℃〕
単発アバランシェエネルギー減少率−チャネル温度
１００
０
８０
６０
４０
２０
０
５０
１００
１５０
Starting Channel Temperature Tch〔℃〕
Power Derating - Case Temperature
過渡熱抵抗
TC=２５℃
TYP
VGS=１０V
８V
出力特性
Drain・Source Voltage VDS〔V〕
０
８０
６０
７０
２０
４０
５０
３０
１０
８０
６０
７０
２０
４０
５０
３０
１０
０
０.２
０.４
０.６
０.８
１
Pulse measurement
６V
５V
Typical Output Characteristics
Pulse measurement
VDS=１０V
TYP
Ｔｃ=１５０℃
Ｔｃ= −５５℃
Ｔｃ=２５℃
Ｔｃ=１００℃
伝達特性
Gate・Source Voltage VGS〔V〕
０１
２
４
３７
８
５
６
Transfer Characteristics
０
ドレイン・ソース間オン抵抗−ドレイン電流
Static Drain-Source On-state Resistance vs Drain Current
Drain Current ID〔A〕
１
5０
1０
１
１０
８０
Pulse measurement
VGS＝10V
Tc＝２５℃
TYP
ドレイン・ソース間オン抵抗−ケース温度
Case Ｔemperature Tc〔℃〕
１
１０
１００
Pulse measurement
−５５
０
１００
１５０
５０
VGS＝10V
TYP
ID=２０A
Static Drain-Source On-state Resistance vs Case Temperature
ゲートしきい値電圧−ケース温度
Case Ｔemperature Tc〔℃〕
Pulse measurement
−５５
０
１００
１５０
５０
VDS＝１０V
ID=１mA
TYP
４.５
４
３.５
３
２.５
２
１.５
１
Gate Threshold Voltage vs Case Temperature
安全動作領域
Safe Operating Area
Drain・Source Voltage VDS〔V〕
RDS（ON）Limited
（at VGS=10V）
Power Dissipation
Limited
Tc＝２５℃
Single Pulse
10ms
1ms
100μs
10μs
DC
１０
５００
１６０
１２０
８０
４０
０．
０１
１
０．
１
１０
０．
１
１
１００
Time t〔s〕
１０-５ １０-４ １０-3 １０-2 １０-1 １０0
１０2 １０3
１０1
Transient Thermal Impedance
０.0１
０.０0１
０.１
１００
1
１０
θja
θjc
キャパシタンス特性
Capacitance Characteristics
Drain・Source Voltage VDS〔Ｖ〕
Ｃｉｓｓ
Ｃｉｓｓ
Ｃｉｓｓ
Ｃoｓｓ
Ｃoｓｓ
Ｃoｓｓ
Ｃrｓｓ
Ｃrｓｓ
Ｃrｓｓ
Tc＝２５℃
f＝１MHz
TYP
VVDS
DS
VDS
０
２０
ゲートチャージ特性
０
６０
８０
１００
４０
２０
０
４０
２０
６０
８０
１００
１４０
１２０
ID=４０A
TYP
Total Gate Charge Qg〔nC〕
VＧS
VDD=８０Ｖ
４０Ｖ
Gate Charge Characteristics
１２
１６
4
8
Single Avalanche Energy Derating vs Channel Temperature
Alumina Substrate 37.5×37.5×3mm
１００００
１０００
１００
０
４０
１００
２０
６０
８０



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