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JCS12N50C Datasheet(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS12N50C Datasheet(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 11 page ![]() R JCS12N50C 版本:201508B 5/11 特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics IF vs VF Transfer Characteristics IR vs VR On-Resistance Variation vs Drain Current and Gate Voltage IF(AV) vs TC Body Diode Forward Voltage Variation vs. Source Current and Temperature IF(AV) vs TC Capacitance Characteristics IF(AV) vs TC Capacitance Characteristics IF(AV) vs TC 0 2 4 6 8 10 12 0 10 20 30 V DS=100V V DS=250V Q g Toltal Gate Charge [nC] V DS=400V 0.1 1 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 25℃ 150℃ V SD Source-Drain voltage[V] 10 0 10 1 10 0 10 1 V DS Drain-Source Voltage[V] Vgs Top: 15.0V 10.0V 9.0V 8.0V 7.0V 6.5V Buttom : 5.5V 0 5 10 15 20 0.2 0.4 0.6 V GS=20V I D Drain Current [A] V GS=10V 2 4 6 8 10 0.1 1 10 Notes: 1.250μs pulse test 2.V DS=40V V GS Gate-Source Voltage[V] 25℃ 150℃ |
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