LED760-40K42 is AlGaAs LED mounted on TO-46 stem with unspherical glass lens,

being designed for high beam uses.

On forward bias, it emits a spectral band of radiation, which peaks at 760nm.

♦Outer dimension（Unit:mm）

♦Features

♦Specifications

♦Absolute Maximum Ratings

Item

Symbol

Maximum Rated Value

Unit

Ambient Temperature

Power Dissipation

200

mW

Ta=25°C

Forward Current

100

mA

Ta=25°C

Pulse Forward Current

500

mA

Ta=25°C

Reverse Voltage

5

V

Ta=25°C

Operating Temperature

-30 ~ +80

°C

Storage Temperature

-30 ~ +100

°C

Soldering Temperature

260

°C

‡

Pulse Forward Current condition: Duty=1% and Pulse Width=10us.

‡

Soldering condition : Soldering condition must be completed within 3 seconds at 260°C

♦Electro-Optical Characteristics

Item

Symbol

Condition

Minimum

Typical

Maximum

Unit

Forward Voltage

1.85

2.00

V

Reverse Current

10

uA

Total Radiated Power

6

10

mW

Radiant Intensity

60.0

mW/sr

Peak Wavelength

740

760

780

nm

Half Width

∆λ

30

nm

Viewing Half Angle

±6

deg.

Rise Time

ｔｒ

80

ns

Fall Time

ｔｆ

80

ns

‡

Total Radiated Power is measured by Photodyne #500

‡

Radiant Intensity is measured by Tektronix J-6512.

1) High radiated intensity

2) High Reliability

1) Product Name

Infrared LED Lamp

2) Type No.

LED760-40K42

3) Chip Spec.

(1) Material

AlGaAs

(2) Peak Wavelength

760nm

4) Package

(1) Type

TO-46 stem

(2) Lens

Unspherical glass lens

(3) Cap

Gold plated