www.onsemi.com

Semiconductor Components Industries, LLC, 2017

Publication Order Number:

March, 2017, Rev. 1.0

NTMFS10N3D2C/D

1

NTMFS10N3D2C

N-Channel

100 V, 151 A, 3.2 m

Ω

Features

Shielded Gate MOSFET Technology

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

100% UIL Tested

RoHS Compliant

General Description

This

N-Channel

MV

MOSFET

is

produced

using

ON

Semiconductor’s

advanced

process

that

incorporates Shielded Gate technology. This process has been

optimized to minimize on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Applications

Primary DC-DC MOSFET

Synchronous Rectifier in DC-DC and AC-DC

Motor Drive

Solar

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

100

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

(Note 5)

151

A

-Continuous

(Note 5)

95

-Continuous

(Note 1a)

21

-Pulsed

(Note 4)

775

Single Pulse Avalanche Energy

(Note 3)

486

mJ

Power Dissipation

138

W

Power Dissipation

(Note 1a)

2.7

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

0.9

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

45

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

NTMFS10N3D2C

NTMFS10N3D2C

Power 56

13 ’’

12 mm

3000 units

Bottom

Power 56

Top

Pin 1

G

S

S

S

D

D

D

D

D

D

D

D

S

S

S

G

Pin 1