Intelligent Power Devices (IPDs)

1

Publication date: August 2003

SLB00059AED

MIP516

Silicon MOSFET type integrated circuit

■ Features

• Built-in five protection functions. (over-current, over-voltage, load-

short-circuit, over heat, ESD)

• Driving directly from CMOS (microcomputer) is possible.

• It is exchangeable easily from a bipolar transistor and MOSFET

• The miniaturized package equipped with three terminals was

adapted.

■ Applications

• Lamp-Solenoid, driver

• Motor driver

■ Absolute Maximum Ratings T

C

= 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Drain-source voltage

− 0.5 to +45

V

Output current

1.0

A

Input voltage

− 0.5 to +6.0

V

Input current

±2mA

1

13

mJ

2

0.2

W

3

0.8

W

Operating ambient temperature

−40 to +85

°C

Channel temperature

150

°C

Storage temperature

−55 to +150

°C

■ Block Diagram

2.90

0.16

+0.10

–0.06

0.95

0.30

+0.10

–0.05

0.50

+0.10

–0.05

0.95

6

5

4

1

32

+0.20

–0.05

10

°

Marking Symbol: MB

Unit : mm

1 : Drain

2 : Drain

3 : Source

4 : In

5 : Drain

6 : Drain

Mini6-G1 Package

Note) *1: L

= 10 mH, I

*2: Single unit

In

Drain

Source

Load short-circuit

protection

Over-current

protection

Gate cutoff

circuit

Over-voltage

protection

Over-heat

protection

ESD protection