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SP470C Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # SP470C
Description  N-Channel Logic Level Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SP470C Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
V
1.8
gFS
S
CISS
3697
pF
COSS
1474
pF
CRSS
953
pF
Qg
126
nC
256
114
54
tD(ON)
61
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=25A
VDS=10V , ID=25A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
2.3
b
f=1.0MHz
b
SP470C
www.samhop.com.tw
Jul,03,2015
2
nC
Qgs
nC
Qgd
9
31
Gate-Drain Charge
Gate-Source Charge
VDS=20V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VDS=20V,ID=25A,VGS=10V
VSD
Diode Forward Voltage
VGS=0V,IS=10A
0.73
1.3
V
2
3
4
61
Ver 1.0
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
_
_



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