 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AT906 Datasheet(PDF) 1 Page - Power Semiconductors |
|
|
|||||||||||||||||||||||||||||
AT906 Datasheet(HTML) 1 Page - Power Semiconductors |
|
|
1 / 4 page  PHASE CONTROL THYRISTOR AT906 Repetitive voltage up to 800 V Mean forward current 5597 A Surge current 95 kA FINAL SPECIFICATION Feb. 17 - Issue: 4 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse voltage 125 800 V V RSM Non-repetitive peak reverse voltage 125 900 V V DRM Repetitive peak off-state voltage 125 800 V I RRM Repetitive peak reverse current V=VRRM 125 300 mA I DRM Repetitive peak off-state current V=VDRM 125 300 mA CONDUCTING I T (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 5597 A I T (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled 4303 A I TSM Surge forward current Sine wave, 10 ms 125 95 kA I² t I² t without reverse voltage 45125 x 10 3 A²s V T On-state voltage On-state current = 9000 A 25 1,26 V V T(TO) Threshold voltage 125 0,85 V r T On-state slope resistance 125 0,045 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 4000A ; gate 10V, 5 W 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 1000 V/µs t d Gate controlled delay time, typical VD=100V; gate source 10V, 10 W , tr=.5 µs 25 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 500 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 4000 A 125 µC I rr Peak reverse recovery current VR= 50 V A I H Holding current, typical VD=5V, gate open circuit 25 500 mA I L Latching current, typical VD=12V, tp=30µs 25 3000 mA GATE V GT Gate trigger voltage VD=12V 25 3,50 V I GT Gate trigger current VD=12V 25 400 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,40 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 10 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 3 W MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 8,5 °C/kW R th(c-h) Thermal impedance Case to heatsink, double side cooled 1,5 °C/kW T j Operating junction temperature -30 / 125 °C F Mounting force 80.0 / 100.0 kN Mass 3000 g ORDERING INFORMATION : AT906 S 08 standard specification VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com |
Similar Part No. - AT906 |
|
Similar Description - AT906 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
