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CMT2301M223 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # CMT2301M223
Description  CMT2301
PDF  7 Pages
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CMT2301M223 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
2005/01/05
Champion Microelectronic Corporation
Page 2
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain- to- Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGSS
±8
V
TA=25℃
-2.5
Continuous Drain Current(TJ=150℃)
TA=70℃
ID
-1.5
A
Pulsed Drain Current
IDM
-10
A
Continuous Source Current(Diode Conduction)
IS
-1.6
A
TA=25℃
1.25
Power Dissipation
TA=70℃
PD
0.8
W
Operating Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
120
℃
/W
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2301
Characteristic
Symbol
Min
Typ
Max
Units
Static
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = -250μA)
V(BR)DSS
-20
V
Gate Threshold Voltage
(VDS = VGS, ID = -250μA)
VGS(th)
-0.45
-1.5
V
Gate Leakage Current
(VDS =0 V, VGS = ±8 V)
IGSS
±100
nA
Zero Gate Voltage Drain Current
(VDS = -20 V, VGS = 0 V)
(VDS = -20 V, VGS = 0 V, TJ = 55℃)
IDSS
-1
-10
μ
A
On-State Drain Current
(VDS
≤ -5 V, V
GS = -4.5V)
(VDS
≤ -5 V, V
GS = -2.5V)
ID(on)
-6
-3
A
Drain-Source On-Resistance
(VGS = -4.5 V, ID = -2.8A)
(VGS = -2.5 V, ID = -2.0A)
RDS(on)
0.105
0.145
0.13
0.19
Ω
Forward Transconductance (VDS = -5 V, ID = -2.8V)
gFS
6.5
S
Diode Forward Voltage (IS=-1.6A,VGS=0V)
VSD
-0.8
-1.2
V
Dynamic
Input Capacitance
Ciss
415
Output Capacitance
Coss
223
Reverse Transfer Capacitance
(VDS = -6 V, VGS =-0V,
f = 1.0 MHz)
Crss
87
pF
td(on)
13
25
Turn-On Time
tr
36
60
td(off)
42
70
Turn-Off Time
(VDD = -6 V,RL=6Ω
ID = -1.0 A,VGEN = -4.5 V,
RG = 6Ω)
tf
34
60
ns
Total Gate Charge
Qg
5.8
10
Gate-Source Charge
Qgs
0.85
Gate-Drain Charge
(VDS = -6 V, ID = -2.8 A,
VGS =-4.5V)
Qgd
1.7
nC



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