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JCS50N06H Datasheet(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS50N06H Datasheet(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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2 / 11 page ![]() R JCS50N06H 版本:201510D 2/11 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) *漏极电流由最高结温限制 *Drain current limited by maximum junction temperature 数 值 Value 项 目 Parameter 符 号 Symbol JCS50N06RH/VH JCS50N06CH JCS50N06FH 单 位 Unit 最高漏极-源极直流电压 Drain-Source Voltage VDSS 60 V 50 50* A 连续漏极电流 Drain Current -continuous ID T=25℃ T=100℃ 31.7 31.7* A 最大脉冲漏极电流(注 1) Drain Current – pulse(note 1) IDM 200* A 最高栅源电压 Gate-Source Voltage VGSS ±20 V 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy (note 2) EAS 500 mJ 雪崩电流(注 1) Avalanche Current(note 1) IAR 50 A 重复雪崩能量(注 1) Repetitive Avalanche Energy(note 1) EAR 8.75 10.3 5.6 mJ 二极管反向恢复最大电压变化速率 (注 3) Peak Diode Recovery dv/dt(note 3) dv/dt 7.0 V/ns 87.5 103.8 56 W 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 0.70 0.83 0.45 W/℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃ 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes TL 300 ℃ |
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