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JCS80N70F Datasheet(PDF) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Part # JCS80N70F
Description  N-CHANNEL MOSFET
PDF  9 Pages
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Manufacturer  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Direct Link  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

JCS80N70F Datasheet(HTML) 4 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

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R
JCS80N70F
版本：201510E
4/9
电特性 ELECTRICAL CHARACTERISTICS
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
t
B
dB(on)
-
18
ns
上升时间 Turn-On rise time
t
B
rB
-
54
ns
延迟时间 Turn-Off delay time
t
B
dB(off)
-
55
ns
下降时间 Turn-Off Fall time
t
B
fB
V
B
DDB=35V,IBDB=40A,RBGB=25Ω
V
B
GSB =10V
（note 4，5）
-
35
ns
栅极电荷总量 Total Gate Charge
Q
B
gB
-
76
nC
栅－源电荷 Gate-Source charge
Q
B
gsB
-
18
-
nC
栅－漏电荷 Gate-Drain charge
Q
B
gdB
V
B
DSB =56V ,
I
B
DB=40A
V
B
GSB =10V
（note 4，5）
-
25
-
nC
漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
I
B
SB
-
-
85
A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
I
B
SMB
-
-
340
A
正向压降
Drain-Source Diode Forward
Voltage
V
B
SDB
V
B
GSB=0V,
I
B
SB=40A
-
-
1.2
V
反向恢复时间
Reverse recovery time
t
B
rrB
-
58
-
ns
反向恢复电荷
Reverse recovery charge
Q
B
rrBBB
V
B
GSB=0V,
I
B
SB=40A
dI
B
FB/dt=100A/μs
(note 4)
-
183
-
nC
热特性 THERMAL CHARACTERISTIC
最大
Max
项
目
Parameter
符
号
Symbol
JCS80N70CF/SF
单 位
Unit
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
0.60
℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
℃/W
注释：
1：脉冲宽度由最高结温限制
2：L=0.27mH, I
B
ASB=85A, RBGB=25 Ω,起始结温TBJB=25℃
3：I
B
SDB ≤85A,di/dt ≤300A/μs,VDD≤BVBDSSB,起始结温
T
B
JB=25℃
4：脉冲测试：脉冲宽度≤300μs,占空比≤2％
5：基本与工作温度无关
Notes:
1：Pulse width limited by maximum junction temperature
2：L=0.27mH, I
B
ASB=85A, RBGB=25 Ω,Starting TBJB=25℃
3：I
B
SDB ≤85A,di/dt ≤300A/μs,VDD≤BVBDSSB, Starting TBJB=25℃
4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％
5：Essentially independent of operating temperature



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