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TSM033NB04LCR Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM033NB04LCR Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 7 page  TSM033NB04LCR Taiwan Semiconductor 2 Version: A1712 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1 1.6 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = 40V IDSS -- -- 1 µA VGS = 0V, VDS = 40V TJ = 125°C -- -- 100 Drain-Source On-State Resistance (Note 3) VGS = 10V, ID = 21A RDS(on) -- 2.3 3.3 m Ω VGS = 4.5V, ID = 19A -- 3.2 4 Forward Transconductance (Note 3) VDS = 10V, ID = 21A gfs -- 63 -- S Dynamic (Note 4) Total Gate Charge VGS = 10V, VDS = 20V, ID = 21A Qg -- 79 -- nC Total Gate Charge VGS = 4.5V, VDS = 20V, ID = 19A Qg -- 40 -- Gate-Source Charge Qgs -- 12 -- Gate-Drain Charge Qgd -- 19 -- Input Capacitance VGS = 0V, VDS = 20V f = 1.0MHz Ciss -- 4456 -- pF Output Capacitance Coss -- 475 -- Reverse Transfer Capacitance Crss -- 276 -- Gate Resistance f = 1.0MHz Rg 0.4 1.5 2.9 Ω Switching (Note 4) Turn-On Delay Time VGS = 10V, VDS = 20V, ID = 21A, RG = 2Ω td(on) -- 3 -- ns Turn-On Rise Time tr -- 21 -- Turn-Off Delay Time td(off) -- 47 -- Turn-Off Fall Time tf -- 25 -- Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 21A VSD -- -- 1 V Reverse Recovery Time IS = 21A , dI/dt = 100A/ μs trr -- 26 -- ns Reverse Recovery Charge Qrr -- 17 -- nC Notes: 1. Silicon limited current only. 2. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 34A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM033NB04LCR RLG PDFN56 2,500pcs / 13 ” Reel |
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