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BAS40 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BAS40 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() BAS40, BAS40-04, BAS40-05, BAS40-06 BAS40, BAS40-04, BAS40-05, BAS40-06 SMD Small Signal Schottky Diodes SMD Kleinsignal-Dioden IFAV = 200 mA VF1 < 0.38 V Tjmax = 150°C VRRM = 40 V IFSM = 600 mA trr < 5 ns Version 2017-01-25 SOT-23 (TO-236) Dimensions - Maße [mm] Typical Applications Signal processing, High-speed switching, Polarity protection Commercial grade 1) Typische Anwendungen Signalverarbeitung, Schnelles Schalten, Verpolschutz Standardausführung 1) Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Extrem schnelles Schalten Niedrige Sperrschicht-Kapazität Niedriger Sperrstrom Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 3000 / 7“ Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 Single Diode BAS40 1 = A 2 = n. c. 3 = C Type Code 43 Series Connection BAS40-04 1 = A1 2 = C2 3 = C1/A2 Type Code 44 Common Cathode BAS40-05 1 = A1 2 = A2 3 = C1/C2 Type Code 45 Common Anode BAS40-06 1 = C1 2 = C2 3 = A1/A2 Type Code 46 Maximum ratings 2) Grenzwerte 2) Power dissipation − Verlustleistung 3) Ptot 310 mW 4) Max. average forward current – Dauergrenzstrom DC IFAV 200 mA 4) Repetitive peak forward current – Periodischer Spitzenstrom IFRM 300 mA 4) Non repetitive peak forward surge current – Stoßstrom-Grenzwert tp ≤ 1 s IFSM 600 mA Repetitive peak reverse voltage – Periodische Spitzensperrspannung VRRM 40 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben 3 Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden 4 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss © http://www.diotec.com/ 1 Pb RoHS 1.1 +0.1 0.4+0.1 2.9 ±0.1 1 2 3 Type Code 1.9 ±0.1 -0.05 -0.2 2 1 3 2 3 1 2 1 3 2 1 3 |
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