| Manufacturer | Part # | Datasheet | Description |
 Stanson Technology |
STN484D
|
549Kb/6P
|
N Channel Enhancement Mode MOSFET
|
 VBsemi Electronics Co.,... |
STN484D.
|
1Mb/8P
|
N-Channel 30-V (D-S) MOSFET
|
| Search Partnumber :
Start with "STN484D" -
Total : 52 ( 1/3 Page) |
 Semtron Microtech Corpo... |
STN4842
|
383Kb/6P |
30V Dual N-Channel Enhancement Mode MOSFET
Rev.2.1 |
 VBsemi Electronics Co.,... |
STN484D.
|
1Mb/8P |
N-Channel 30-V (D-S) MOSFET
|
 Stanson Technology |
STN4822
|
516Kb/6P |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
|
STN4826
|
686Kb/6P |
Dual N Channel Enhancement Mode MOSFET
|
|
STN4828
|
511Kb/6P |
Dual N Channel Enhancement Mode MOSFET
|
 VBsemi Electronics Co.,... |
STN4828
|
1Mb/9P |
Dual N-Channel 60 V (D-S) 175 째C MOSFET
|
 Stanson Technology |
STN4850
|
532Kb/6P |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
 SHENZHEN DOINGTER SEMIC... |
STN4850
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Stanson Technology |
STN488DN
|
830Kb/6P |
N Channel Enhancement Mode MOSFET
|
|
STN4102
|
410Kb/6P |
N Channel Enhancement Mode MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STN4102
|
756Kb/5P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
STN4102
|
1,018Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
 Stanson Technology |
STN410D
|
498Kb/8P |
N Channel Enhancement Mode MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STN410D
|
986Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
 Stanson Technology |
STN4110
|
876Kb/8P |
N Channel Enhancement Mode MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STN4110
|
1Mb/5P |
N-Channel MOSFET uses advanced SGT technology
|
 VBsemi Electronics Co.,... |
STN4130
|
898Kb/6P |
N-Channel 60-V (D-S) MOSFET
|
 Stanson Technology |
STN4130
|
1Mb/7P |
N Channel Enhancement Mode MOSFET
|