| Manufacturer | Part # | Datasheet | Description |
 Cree, Inc |
GTVA212701FA-V2-R0
|
434Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
|
 WOLFSPEED, INC. |
GTVA212701FA-V2-R0
|
566Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz
Rev. 04.2, 2022-1-27 |
 Cree, Inc |
GTVA212701FA
|
434Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz
|
 WOLFSPEED, INC. |
GTVA212701FA
|
566Kb/8P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz
Rev. 04.2, 2022-1-27 |
 Infineon Technologies A... |
GTVA220701FA
|
862Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-08-18 |
 Cree, Inc |
GTVA220701FA
|
581Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz
|
 WOLFSPEED, INC. |
GTVA220701FA
|
736Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA220701FA-V1-R0
|
736Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA220701FA-V1-R2
|
736Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz
Rev. 05.1, 2022-1-27 |
 Infineon Technologies A... |
GTVA220701FA
|
862Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-08-18 |
 WOLFSPEED, INC. |
GTVA220701FA_V1
|
736Kb/9P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz
Rev. 05.1, 2022-1-27 |
 Infineon Technologies A... |
GTVA221701FA
|
616Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-07-27 |
|
GTVA221701FA
|
616Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-07-27 |
|
GTVA261701FA
|
858Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-05-29 |
 Cree, Inc |
GTVA261701FA
|
591Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
|
 WOLFSPEED, INC. |
GTVA261701FA
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA261701FA-V1
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA261701FA-V1-R0
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
|
GTVA261701FA-V1-R2
|
750Kb/10P |
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Rev. 05.1, 2022-1-27 |
 Infineon Technologies A... |
GTVA261701FA
|
858Kb/4P |
Thermally-Enhanced High Power RF GaN HEMT
Rev. 01, 2015-05-29 |