FEATURES
• Low RDS(on) TrenchFET®: 1.5 V rated
• 1.5 V to 12 V input
• 1.8 V to 8 V logic level control
• Low profile, small footprint TSOP-6 package
• 2100 V ESD protection on input switch, VON/OFF
• Adjustable slew-rate
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS
• Load switch with level-shift gate drive
• Slew-rate control
• Portable / consumer devices

DESCRIPTION
The Si3865DDV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.8 V. The Si3865DDV operates
on supply lines from 1.5 V to 12 V, and can drive loads up
to 2.8 A.