Features
• 1A MOSFET gate driver
• 90μA typical start-up current, 125μA maximum
• Moisture Sensitivity Level (MSL) rating is 1
• 35ns propagation delay current sense to output
• Fast transient response with Peak Current mode
control
• 9V to 13.2V operation
• Adjustable switching frequency to 1MHz
• 35ns rise time and 29ns fall time with 1nF output
load
• Trimmed timing capacitor discharge current for
accurate dead time/maximum duty cycle control
• 1.5MHz bandwidth error amplifier
• Tight tolerance voltage reference over line, load,
and temperature
• ±3% current limit threshold
• Ni/Pd/Au-Ag lead finish (Tin (Sn) free)
• Characterized radiation levels
○ Low Dose Rate (LDR) (0.01rad(Si)/s): 30krad(Si)
○ Single event burnout LET 43MeV•cm2/mg