• 650V enhancement mode HEMT with integrated driver
• 450mΩ RDSON
• 5V PWM input
• UVLO protection
• Zero reverse recovery
• Low quiescent current driver
• Adjustable turn-on slew rate
• Dv/Dt immunity both with/without driver-supply
• Low propagation delay for up to 2MHz operation
2.0 Topologies and Applications
• As switching FETs in singles, or in pairs as half-bridges
• AC-DC, DC-DC, DC-AC converters
• PFC applications (totem pole and standard)
• High frequency LLC converters
• Mobile chargers and laptop adapters
• LED and motor drives
• Server power supplies
1.0 Features
3.0 Description
The DTQ35N65GN is a 450mΩ, 650V GaN HEMT devicewith integrated driver circuit. The monolithic integration ofdriver minimizes inductance in the gate loop enabling safeand clean switching even at high-voltage high-frequencyoperations.This device makes the applications moreefficient/reliable,and also reduces the size of themagnetic components dramatically. UVLO function of thedevice turns-off the HEMT in case VDD voltage droopsbelow its threshold voltage. A proprietary dv/dt protectioncircuit protects the HEMT from drain-dvdt induced falseturn-on even in the absence of VDD supply. An externalresistance between Vreg and RG allows control of drainvoltage slew rate for best EMI performance.