• 650V enhancement mode HEMT with integrated driver
• 360mΩ RDSON
• 5V PWM input
• UVLO protection
• Zero reverse recovery
• Low quiescent current driver
• Adjustable turn-on slew rate
• Dv/Dt immunity both with/without driver-supply
• Low propagation delay for up to 2MHz operation
2.0 Topologies and Applications
• As switching FETs in singles, or in pairs as half-bridges
• AC-DC, DC-DC, DC-AC converters
• PFC applications (totem pole and standard)
• High frequency LLC converters
• Mobile chargers and laptop adapters
• LED and motor drives
• Server power supplies
3.0 Description
The DTQ45N65GN is a 360mΩ, 650V GaN HEMT devicewith integrated driver circuit. The monolithic integration ofdriver minimizes inductance in the gate loop enabling safeand clean switching even at high-voltage high-frequencyoperations.This device makes the applications more efficient/reliable,and also reduces the size of the magnetic componentsdramatically. UVLO function of the device turns-off the HEMTin case VDD voltage droops below its threshold voltage. Aproprietary dv/dt protection circuit protects the HEMT fromdrain-dvdt induced false turn-on even in the absence of VDDsupply. An external resistance between Vreg and RG allowscontrol of drain voltage slew rate for best EMI performance.
1.0 Features